HEMTs utilize heterojunction between two semiconducting materials to confine electrons to a triangular quantum well.Operation principles (Polarization) AlGaN/GaN HEMTs transistor don’t need doping to obtain a high electron density. Most used material, cheap, good quality commercial wafers.Necessary to growth in a wafer of another material.Adequate for high power amplifiers High Breakdown voltage.High electron density(Polarization effects).Conventional HEMTs use a AlGaAs/GaAsAlGaN/GaN.Transistors are used in electronic devices e.g.GaN HEMT structure and operation principles.High Electron Mobility Transistors Presented by: Date: SujanaKorrapati, SaiDivya Anne We will discuss different types of HEMTs and their Applications. Abstract: HEMT is a field effect transistor incorporating a junction between two materials with different band gaps as the channel.
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